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8000
Common Emitter
1000
Common Emitter
7000
6000
Cies
V GE = 0V, f = 1MHz
T C = 25 ℃
V CC = 300V, V GE = ± 15V
I C = 80A
T C = 25 ℃
T C = 125 ℃
Ton
5000
Tr
4000
3000
2000
Coes
100
Cres
1000
0
20
1
10
30
1
10
80
Collector - Emitter Voltage, V CE [V]
Fig 7. Capacitance Characteristics
Gate Resistance, R G [ ? ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
Common Emitter
V CC = 300V, V GE = ± 15V
10000
Common Emitter
V CC = 300V, V GE = ± 15V
1000
I C = 80A
T C = 25 ℃
T C = 125 ℃
Toff
I C = 80A
T C = 25 ℃
T C = 125 ℃
Eon
Eoff
Eoff
Tf
100
30
Tf
1000
1
10
80
1
10
80
Gate Resistance, R G [ ? ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
500
Gate Resistance, R G [ ? ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 3.9 ?
T C = 25 ℃
T C = 125 ℃
Toff
100
Toff
10
Ton
Tr
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 3.9 ?
T C = 25 ℃
T C = 125 ℃
100
20
Tf
Tf
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Collector Current, I C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
?2002 Fairchild Semiconductor Corporation
Collector Current, I C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGL160N60UFD Rev. B1
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